Sb-based Mid-IR lasers grown by MBE on Silicon(001)
Résumé
We present our results on the growth of GaSb-based laser diodes (LDs) and InAs/AlSb quantumcascade lasers (QCLs) on GaSb/Si(001) templates. We show that thanks to a dedicated nucleation strategy these structures are free of emerging anti-phase boundaries. LDs operate in cw mode up to >80 °C without thermal roll-over but with a threshold 5 times higher than that of LDs grown on GaSb whereas the QCLs exhibit similar properties when grown on Si or on their native InAs substrate.
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