Sb-based Mid-IR lasers grown by MBE on Silicon(001)

Marta Rio Calvo (1, 2) , Jean-Baptiste Rodriguez (1, 2, 3) , Laura Monge Bartolome (1, 2) , Laurent Cerutti (1, 2) , Zeineb Loghmari (1, 2) , Roland Teissier (1, 2) , A. N. Baranov (1, 2) , Eric Tournié (1, 2, 4)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge
3 MAT - Matériaux
4 PO - Photonique et Ondes

We present our results on the growth of GaSb-based laser diodes (LDs) and InAs/AlSb quantumcascade lasers (QCLs) on GaSb/Si(001) templates. We show that thanks to a dedicated nucleation strategy these structures are free of emerging anti-phase boundaries. LDs operate in cw mode up to >80 °C without thermal roll-over but with a threshold 5 times higher than that of LDs grown on GaSb whereas the QCLs exhibit similar properties when grown on Si or on their native InAs substrate.

Mots clés: III-V/Si heteroepitaxy; monolithic integration; laser diode; quantum cascade laser

Domaines: Sciences de l'ingénieur [physics]

Marta Rio Calvo, Jean-Baptiste Rodriguez, Laura Monge Bartolome, Laurent Cerutti, Zeineb Loghmari, et al.. Sb-based Mid-IR lasers grown by MBE on Silicon(001). 21st International Conference on Molecular Beam Epitaxy, Sep 2021, Online, Mexico. ⟨hal-03377236⟩