Study of Latent Defects Induced by Swift Heavy Ion Irradiation on MOS Devices Gate Oxide

M. Marinoni (1) , Antoine Touboul (1, 2) , D. Zander , C. Petit , A.M.J.F. Carvalho (1) , R. Arinero (1, 3) , M. Ramonda (1) , Frédéric Saigné (1, 2) , C. Weulersse , N. Buard (4) , T. Carriere (4) , E. Lorfèvre (5)

1 IES - Institut d’Electronique et des Systèmes
2 RADIAC - Radiations et composants
3 NANOMIR - Composants à Nanostructure pour le moyen infrarouge
4 EADS, Corporate Research Center
5 CNES - Centre National d'Études Spatiales [Toulouse]

Domains: Electronics

M. Marinoni, Antoine Touboul, D. Zander, C. Petit, A.M.J.F. Carvalho, et al.. Study of Latent Defects Induced by Swift Heavy Ion Irradiation on MOS Devices Gate Oxide. 45th IEEE Nuclear Space and Radiation Effects Conference, 2008, Tucson, United States. ⟨hal-01822461⟩