Characterization of ESD stress effects on SiC MOSFETs using photon emission spectral signatures - Archive ouverte HAL

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Conference Papers Year : 2017

Characterization of ESD stress effects on SiC MOSFETs using photon emission spectral signatures

(1) , (1) , (1) , (1)

1

Niemat Moultif

Function : Author
PersonId : 750874
IdHAL : moultif
ORCID : 0000-0002-9765-2106
IdRef : 223732303

Groupe de physique des matériaux

Eric Joubert

Function : Author
PersonId : 175065
IdHAL : eric-joubert
ORCID : 0000-0001-6585-4603
IdRef : 083021450

Groupe de physique des matériaux

Mohamed Lamine Masmoudi

Function : Author
PersonId : 175174
IdHAL : mohamed-masmoudi
IdRef : 158684656

Groupe de physique des matériaux

O. Latry

Function : Author
PersonId : 175169
IdHAL : olivierl
ORCID : 0000-0002-2121-8864
IdRef : 151805482

Groupe de physique des matériaux

Domains

Materials Science [cond-mat.mtrl-sci]

Etienne Talbot : Connect in order to contact the contributor

https://hal.science/hal-01765953

Submitted on : Friday, April 13, 2018-11:23:35 AM

Last modification on : Wednesday, April 24, 2024-1:36:03 PM

Dates and versions

hal-01765953 , version 1 (13-04-2018)

Identifiers

HAL Id : hal-01765953 , version 1
DOI : 10.1109/ram.2017.7889732

Cite

Niemat Moultif, Eric Joubert, Mohamed Lamine Masmoudi, O. Latry. Characterization of ESD stress effects on SiC MOSFETs using photon emission spectral signatures. 2017 Annual Reliability and Maintainability Symposium (RAMS), Jan 2017, Orlando, France. ⟨10.1109/ram.2017.7889732⟩. ⟨hal-01765953⟩

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