A New Class-C Very Low Phase-Noise Ku-band VCO in 0.25 μm SiGe:C BiCMOS Technology

Jérémy Hyvert (1, 2) , David Cordeau (2) , Jean-Marie Paillot (2) , Pascal Philippe (1) , Fahs Bassem (3)

1 NXP Semiconductors
2 XLIM-SIC - SIC
3 LIU - Lebanese International University

This paper presents a very low phase noise, fully integrated and differential Ku-band Voltage Controlled Oscillator (VCO) implemented in the QUBiC4X 0.25 μm SiGe:C BiCMOS process of NXP semiconductors. The originality of this design consists in using a new class-C architecture type. Under 5 V supply voltage and a maximum power dissipation of 123 mW, the proposed VCO features a worst case phase noise of -97 dBc/Hz at 100 kHz frequency offset from a 14.45 GHz carrier. The VCO is tuned from 13.59 GHz to 14.89 GHz with a tuning voltage varying from 1 V to 4.5 V and occupies 0.83x1.05 mm².

Mots clés: BiCMOS; Voltage-controlled oscillators; Class-C; Phase noise.

Domaines: Electronique

Jérémy Hyvert, David Cordeau, Jean-Marie Paillot, Pascal Philippe, Fahs Bassem. A New Class-C Very Low Phase-Noise Ku-band VCO in 0.25 μm SiGe:C BiCMOS Technology. 2015 IEEE MTT-S International Microwave Symposium (IMS), May 2015, Phoenix, United States. ⟨hal-01157576⟩