A new design flow based on behavioral modelling applied to wideband and highly efficient power amplifiers with GaN packaged transistors
Résumé
This paper describes a new methodology of wideband and highly efficient design with packaged transistors using behavioral model in CAD software. The Multi-Harmonic Volterra (MHV) model of a 10W GaN transistor has been extracted from Time domain Load-Pull measurements, and has been implemented into CAD software for the design procedure. The designed power amplifier exhibits, in measurement, a drain efficiency between 65-75% on a 33% bandwidth around 2.15 GHz for a minimum output power of 40 dBm.