Properties of RF magnetron sputtered zinc oxide thin films
Résumé
ZnO thin films were deposited on silicon substrate by RF magnetron sputtering using metallic zinc target. A systematic study has been made of the influence of oxygen concentration and the RF power on the films structural properties. They exhibited a c-axis orientation of below 0.32° FWHM of X-ray rocking curves, an extremely high resistivity of 1012 Ω cm and an energy gap of 3.3 eV at room temperature. It was found that a RF power of 50 W, target to substrate distance 70 mm, very low gas pressures of 3.35 x 10-3 Torr in argon and oxygen mixed gas atmosphere giving to ZnO thin films a good homogeneity and a high crystallinity.
Mots clés
Operating mode
Roughness
Texture
Surfaces
Mechanical properties
Transition element compounds
Energy gap
Optical transmission
Electrical conductivity
Strained layer
Fabrication property relation
Fabrication structure relation
Crystal perfection
Electrical properties
Optical properties
norganic compounds
Magnetrons
Radiofrequency sputtering
Crystal growth from vapors
Thin films
Zinc oxides
Wide band gap semiconductors
II-VI semiconductors
Experimental study