Skip to Main content Skip to Navigation
Conference papers

Effects of Total Ionizing Dose on I-V and Low Frequency Noise characteristics in advanced Si/SiGe:C Heterojunction Bipolar Transistors

Complete list of metadata

https://hal.archives-ouvertes.fr/hal-02380234
Contributor : Bruno Sagnes Connect in order to contact the contributor
Submitted on : Tuesday, November 26, 2019 - 10:55:20 AM
Last modification on : Wednesday, November 3, 2021 - 6:11:28 AM

Identifiers

  • HAL Id : hal-02380234, version 1

Collections

Citation

J. Elbeyrouthy, A. Vauthelin, M. Seif, Bruno Sagnes, F. Pascal, et al.. Effects of Total Ionizing Dose on I-V and Low Frequency Noise characteristics in advanced Si/SiGe:C Heterojunction Bipolar Transistors. RADECS 2019, 30th European Conference on Radiation and its Effects on Components and Systems, Sep 2019, Montpellier, France. ⟨hal-02380234⟩

Share

Metrics

Record views

77