Non-Volatile Bipolar TiN/LaMnO3/Pt Memristors with Optimized Performance

Raquel Rodriguez-Lamas (1, 2) , Dolors Pla (1, 2) , Caroline Pirovano (3, 4) , Odette Chaix-Pluchery (1, 2) , Carlos Moncasi (1, 5) , Michel Boudard (1, 6, 2) , Rose-Noëlle Vannier (3, 4) , Carmen Jiménez (1, 2) , Mónica Burriel (1, 2)

1 LMGP - Laboratoire des matériaux et du génie physique
2 UGA - Université Grenoble Alpes
3 Université de Lille
4 UCCS - Unité de Catalyse et Chimie du Solide - UMR 8181
5 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
6 CNRS - Centre National de la Recherche Scientifique

LaMnO 3+δ (LMO) perovskite is a very interesting candidate for Valence Change Memories due to its flexible stoichiometry, accommodated through the Mn +3 /Mn +4 equilibrium, at the origin of significant resistivity changes. Here, the successful combination of a LMO layer, with a top active TiN electrode and a bottom inert Pt electrode, is presented. The manganite layer is integrated on silicon-based substrates in the form of a polycrystalline film. By comparing the memristive behavior of these TiN/LMO/Pt devices with Au/LMO/Pt devices prepared on the same film, the essential role of the active oxygen electrode is put in evidence. TiN/LMO/Pt memristive devices show optimized performance, operating in both sweep and pulse mode, with the capability of cycling more than a hundred times and showing good retention. Furthermore, a simple phenomenological model describing the memristive behavior of the devices is also presented.

Mots clés: Resistive switching valence change memories (VCMs) manganites memristive devices metal organic chemical vapor deposition (MOCVD)

Domaines: Chimie

Raquel Rodriguez-Lamas, Dolors Pla, Caroline Pirovano, Odette Chaix-Pluchery, Carlos Moncasi, et al.. Non-Volatile Bipolar TiN/LaMnO3/Pt Memristors with Optimized Performance. Materials Today Electronics, 2023, 5, pp.100054. ⟨10.1016/j.mtelec.2023.100054⟩. ⟨hal-04260437⟩