Improved Power Factor in Self-Substituted Fe 2 VAl Thermoelectric Thin Films Prepared by Co-sputtering

Daniel Bourgault (1) , Hajar Hajoum (1) , Sébastien Pairis (2) , Olivier Leynaud (3) , Richard Haettel (4) , Jean François Motte (5) , Olivier Rouleau (6) , Eric Alleno (6)

1 NEEL - TPS - Thermodynamique et biophysique des petits systèmes
2 NEEL - C2MA - Croissance Cristalline et MicroAnalyse
3 NEEL - X'Press - X'Press : diffraction et hautes pressions
4 NEEL - ExpE - Ingénierie Expérimentale
5 NEEL - Nanofab - Nanofabrication
6 ICMPE - Institut de Chimie et des Matériaux Paris-Est

We present a strong improvement of the electronic transport properties in the Fe 2 VAl Heusler alloy obtained in thin film form by a co-sputtering process. The power factor is improved when deposition occurs at temperatures close to 873 K and when composition is tuned using a co-sputtering process. High values up to 5.6 mW/K 2 m are obtained for n-type films deposited at 873 K which is up to now a record for self-substituted Fe 2 VAl thermoelectric thin films. Influence of the co-sputtering conditions on atomic composition as well as substrate effect on electronic transport properties are also presented.

Mots clés: Thermoelectric thin film Fe 2 VAl High power factor co sputtering; Thermoelectric; thin film; Fe 2 VAl; High power factor; co sputtering

Domaines: Physique [physics]

Daniel Bourgault, Hajar Hajoum, Sébastien Pairis, Olivier Leynaud, Richard Haettel, et al.. Improved Power Factor in Self-Substituted Fe 2 VAl Thermoelectric Thin Films Prepared by Co-sputtering. ACS Applied Energy Materials, 2023, 6 (3), pp.1526-1532. ⟨10.1021/acsaem.2c03405⟩. ⟨hal-03948872⟩