Temperature monitoring of short-gate length AlGaN/GaN HEMT via an integrated sensor

Flavien Cozette (1, 2) , Marie Lesecq (3, 4) , N. Defrance (3, 4) , Michel Rousseau (3, 4) , Jean-Claude de Jaeger (3, 4) , Adrien Cutivet (3, 4) , Hassan Maher (2, 1) , Maher, Hassan (2, 1)

1 LN2 - Laboratoire Nanotechnologies Nanosystèmes
2 3IT - Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke]
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
4 PUISSANCE - IEMN - Puissance - IEMN

This paper describes a new method to measure AlGaN/GaN High Electron Mobility Transistors (HEMTs) operating temperature in devices dedicated to RF application. A resistive nickel temperature sensor is integrated into HEMT active area. The technological process development permits to integrate the sensor close to the transistor hot spot providing HEMT temperature under operation. A maximal temperature of 68°C is extracted for a dissipated power of 3.5 W/ mm corresponding to a thermal resistance of 10.6 Kmm/W. This new method shows the capability to monitor component self-heating in real time and to predict its failure. Furthermore, it is shown that the sensor has no influence on DC HEMT electrical behavior and its impact on current and power cutoff frequencies is negligible.

Mots clés: HEMT; GaN; Sensor; Temperature

Domaines: Sciences de l'ingénieur [physics]

Flavien Cozette, Marie Lesecq, N. Defrance, Michel Rousseau, Jean-Claude de Jaeger, et al.. Temperature monitoring of short-gate length AlGaN/GaN HEMT via an integrated sensor. 48th European Solid-State Device Research Conference (ESSDERC 2018), Sep 2018, Dresden, Germany. pp.134-137, ⟨10.1109/ESSDERC.2018.8486912⟩. ⟨hal-03695010⟩