Backside Laser Testing of Single-Event Effects in GaN-on-Si Power HEMTs

C. Ngom (1, 2, 3) , Vincent Pouget (2, 1) , M. Zerarka (3) , F. Coccetti (3) , Antoine Touboul (1, 2) , M. Matmat (3) , O. Crepel (4, 3) , S. Jonathas (5) , G. Bascoul (6)

1 IES - Institut d’Electronique et des Systèmes
2 RADIAC - Radiations et composants
3 IRT Saint Exupéry - Institut de Recherche Technologique
4 Airbus [France]
5 PULSCAN
6 CNES - Centre National d'Études Spatiales [Toulouse]

We present backside laser testing of GaN power devices on Si substrate using optical parameters compatible with three-photon absorption in GaN and single-photon absorption in the substrate. The laser/device interaction is described. Two different kinds of transients are observed at the gate electrode and analyzed. The technique allows identifying the sensitive regions of the devices and generating destructive events.

Mots clés: Single-event effects; GaN; laser testing; three photon absorption

Domaines: Electronique

C. Ngom, Vincent Pouget, M. Zerarka, F. Coccetti, Antoine Touboul, et al.. Backside Laser Testing of Single-Event Effects in GaN-on-Si Power HEMTs. IEEE Transactions on Nuclear Science, 2021, 68 (8), pp.1642-1650. ⟨10.1109/TNS.2021.3081485⟩. ⟨hal-03428144⟩