GaN Schottky Diode for High Power THz Generation using Multiplier Principle

Giuseppe Di Gioia (1, 2) , V K Chinni (1, 3) , Malek Zegaoui (1) , Y Cordier (4) , A Maestrini (5) , J Treuttel (5) , Guillaume Ducournau (1, 6) , Yannick Roelens (1, 2) , M Zaknoune (1, 2)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 ANODE - IEMN - Advanced NanOmeter DEvices - IEMN
3 EPIPHY - IEMN - EPItaxie et PHYsique des hétérostructures - IEMN
4 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
5 LERMA - LERMA Cergy
6 PHOTONIQUE THZ - IEMN - Photonique THz - IEMN

GaN-based planar Schottky barrier diodes with potential applications in THz frequency multipliers were fabricated and characterized. GaN is a promising candidate to overcome all the physical limitations of GaAs which have been reached in the frame of high frequency power multiplier applications. Fabrication process of GaN Schottky diodes performed by e-beam is presented and DC characterizations are reported. The preliminary results showed that the behaviour in reverse bias is dominated by a leakage coming from the Schottky surface more than the periphery of the diode despite the supposed damage caused by the dry etching.

Domaines: Micro et nanotechnologies/Microélectronique

Giuseppe Di Gioia, V K Chinni, Malek Zegaoui, Y Cordier, A Maestrini, et al.. GaN Schottky Diode for High Power THz Generation using Multiplier Principle. Proc. 43rd Workshop Compound Semiconductor Devices Integr. Circuits (WOCSDICE), Jun 2019, Cabourg, France. ⟨hal-03384353⟩