Anti-phase boundaries annihilation in the growth of GaSb on Silicon(001)

Jean-Baptiste Rodriguez (1, 2, 3) , M Rio Calvo (1, 2) , Charles Cornet (4) , Laurent Cerutti (1, 2) , M Ramonda (5, 6) , A Trampert (7) , Gilles Patriarche (8, 9) , Eric Tournié (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge
3 MAT - Matériaux
4 FOTON - Institut des Fonctions Optiques pour les Technologies de l'informatiON
5 UM - Université de Montpellier
6 Centrale de Technologie en Micro et Nanoélectronique CTM-­LMCP
7 PDI - Paul-Drude-Institut für Festkörperelektronik
8 Université Paris-Saclay
9 C2N - Centre de Nanosciences et de Nanotechnologies

We present a study of the APB annihilation mechanism during the growth of GaSb on "on-axis" Si (001) substrates. We demonstrate for the first time that the APDs are buried by the main-phase domain due to the growth rate difference existing between the two domains. We experimentally quantified the growth rate difference and explored the various parameters influencing this mechanism, using an original approach based on AFM analysis of several series of samples.

Mots clés: III-V/Si heteroepitaxy; monolithic integration; miscut; antiphase domains

Domaines: Sciences de l'ingénieur [physics]

Jean-Baptiste Rodriguez, M Rio Calvo, Charles Cornet, Laurent Cerutti, M Ramonda, et al.. Anti-phase boundaries annihilation in the growth of GaSb on Silicon(001). 21st International Conference on Molecular-Beam Epitaxy (IC-MBE 2021), Sep 2021, online, Mexico. ⟨hal-03336876⟩