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Broadband non-contact characterization of epitaxial graphene by near-field microwave microscopy

Sijia Gu Xin Zhou 1, 2 Tianjun Lin Henri Happy 1 Tuami Lasri 1
2 CARBON-IEMN - Carbon-IEMN
IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520
Abstract : In this paper, a broadband non-destructive and non-contact local characterization of graphene fabricated by epitaxial method on silicon carbide is demonstrated by using an interferometerbased near-field microwave microscope. First, a method has been proposed to extract the dielectric properties of silicon carbide, and finally, the graphene flake has been characterized as a resistance (similar to 20 k Omega) and a small inductance (360 pH) in the frequency band (2-18 GHz). The advantage of the proposed method is that there is no need to fabricate electrodes on the sample surface for the characterization. The instrument proposed is a good candidate for the local characterization of 2D materials.
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https://hal.archives-ouvertes.fr/hal-03335175
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Submitted on : Monday, September 6, 2021 - 8:56:21 AM
Last modification on : Tuesday, October 19, 2021 - 6:38:26 PM

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Sijia Gu, Xin Zhou, Tianjun Lin, Henri Happy, Tuami Lasri. Broadband non-contact characterization of epitaxial graphene by near-field microwave microscopy. Nanotechnology, Institute of Physics, 2017, 28 (33), 335702, 11 p. ⟨10.1088/1361-6528/aa7a36⟩. ⟨hal-03335175⟩

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