A 140 GHz to 160 GHz active impedance tuner for in-situ noise characterization in BiCMOS 55 nm
Résumé
A millimeter-wave active impedance tuner is implemented on the STMicroelectronics BiCMOS 55 nm technology for in-situ noise characterization. The presented circuit is composed of a two stage low noise amplifier with a gain of 11 dB and a NF of 7.5 dB at 150 GHz loading a 64 states passive impedance tuner. This active tunable circuit provides a reflection coefficient. > 0.5 and a S-21 parameter between -7 dB and +4.5 dB in the 140-160 GHz frequency range. At 146 GHz, the noise factor value is from 8 dB to 10.5 dB. The core area is 0.336 mm(2). Its measured performances in noise and S parameters make its integration possible in an in-situ noise characterization bench on Silicon.