Area selective deposition of silicon by plasma enhanced chemical vapor deposition using a fluorinated precursor
Résumé
An Area Selective Deposition (ASD) process using Plasma-Enhanced Chemical Vapour Deposition (PECVD) is demonstrated. Using a plasma chemistry containing a fluorinated silicon precursor (SiF 4), no deposition is observed on an aluminum oxide (AlO X) surface area, whereas a thin film of silicon is deposited on a silicon nitride (SiN X) surface area, while both areas are located on the same crystalline silicon substrate. The thin film deposition is characterized using spectroscopic ellipsometry, scanning electron microscopy, and atomic force microscopy, showing that 10 nm of silicon is deposited on the SiN x in 4 min. The growth on the SiN X is characterized by small grains and a rough surface, consistent with microcrystalline silicon, while no deposition or etching is observed for the AlO X surface.
Domaines
Physique [physics]
Fichier principal
Akiki EVJ Selective Deposition ApplSurfSci 2020.pdf (875.02 Ko)
Télécharger le fichier
Origine : Publication financée par une institution