Thermal Analysis of AlGaN/GaN High-Electron Mobility Transistors Using I–V Pulsed Characterizations and Infra Red Microscopy

Niemat Moultif (1) , Andres Echeverri (1) , Dominique Carisetti (2) , O. Latry (1) , Eric Joubert (1)

1 GPM - Groupe de physique des matériaux
2 TRT - Thales Research and Technologies [Orsay]

Domaines: Sciences de l'ingénieur [physics]

Niemat Moultif, Andres Echeverri, Dominique Carisetti, O. Latry, Eric Joubert. Thermal Analysis of AlGaN/GaN High-Electron Mobility Transistors Using I–V Pulsed Characterizations and Infra Red Microscopy. IEEE Transactions on Device and Materials Reliability, 2019, 19 (4), pp.704-710. ⟨10.1109/TDMR.2019.2950091⟩. ⟨hal-02614080⟩