Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon

M. Rio Calvo (1, 2) , Laura Monge-Bartolomé (1, 2) , M. Bahriz (1, 2) , Guilhem Boissier (1, 2) , Laurent Cerutti (1, 2) , Jean-Baptiste Rodriguez (1, 2) , Eric Tournié (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge

The direct epitaxial growth of III-V semiconductor lasers on standard, CMOS-compatible, on-axis (001) Si substrates is actively sought for the realization of active photonic integrated circuits. Here we report on the first mid-infrared semiconductor laser epitaxially grown on on-axis Si substrates, i.e., compatible with industry standards. Furthermore, these GaSb-based laser diodes demonstrate low threshold current density, low optical losses, high temperature operation, and high characteristic temperatures. These results represent a breakthrough toward the integration of semiconductor laser sources on Si for smart sensors.

Domaines: Sciences de l'ingénieur [physics]; Optique / photonique

M. Rio Calvo, Laura Monge-Bartolomé, M. Bahriz, Guilhem Boissier, Laurent Cerutti, et al.. Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon. Optica, 2020, 7 (4), pp.263. ⟨10.1364/OPTICA.388383⟩. ⟨hal-02520879⟩