Investigation of trap induced power drift on 0.15µm GaN technology after aging tests

Florent Magnier; Benoit Lambert; Christophe Chang; Arnaud Curutchet; Nathalie Labat; Nathalie Malbert

Conference Papers Year : 2019

Investigation of trap induced power drift on 0.15µm GaN technology after aging tests

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1
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Florent Magnier

Function : Author

Laboratoire de l'intégration, du matériau au système

United Monolithic Semiconductors

Benoit Lambert

Function : Author

United Monolithic Semiconductors

Christophe Chang

Function : Author

United Monolithic Semiconductors

Arnaud Curutchet

Function : Author

Laboratoire de l'intégration, du matériau au système

Nathalie Labat

Function : Author

Laboratoire de l'intégration, du matériau au système

Nathalie Malbert

Function : Author

Laboratoire de l'intégration, du matériau au système

Domains

Electronics

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S0026271419305311.pdf (819.86 Ko)

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https://hal.science/hal-02462713

Submitted on : Tuesday, December 21, 2021-12:29:40 PM

Last modification on : Monday, June 5, 2023-4:52:11 PM

Long-term archiving on: Wednesday, March 23, 2022-10:17:32 AM

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hal-02462713 , version 1 (21-12-2021)

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HAL Id : hal-02462713 , version 1

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Florent Magnier, Benoit Lambert, Christophe Chang, Arnaud Curutchet, Nathalie Labat, et al.. Investigation of trap induced power drift on 0.15µm GaN technology after aging tests. ESREF 2019, Sep 2019, Toulouse, France. ⟨hal-02462713⟩

Investigation of trap induced power drift on 0.15µm GaN technology after aging tests

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