Drain Current Recovery Time Analyses of InAlGaN/GaN HEMTs Realized with a Back-Barrier Buffer Layer

S. Piotrowicz (1) , C. Potier (1) , J.C. Jacquet (2) , J.C. Nallatamby (3) , Michel Prigent (3) , P. Altuntas (2) , E. Chartier (2) , C. Dua (2) , P. Gamarra (1) , C. Lacam (1) , N. Michel (1) , M. Oualli (2) , O. Patard (2) , S.L. Delage (2)

1 III-V Lab - Alcatel-Thales III-V Lab
2 III-V Lab - Alcatel-Thalès III-V lab
3 XLIM-SRF - Systèmes RF

Domaines: Sciences de l'ingénieur [physics]

S. Piotrowicz, C. Potier, J.C. Jacquet, J.C. Nallatamby, Michel Prigent, et al.. Drain Current Recovery Time Analyses of InAlGaN/GaN HEMTs Realized with a Back-Barrier Buffer Layer. 2019 14th European Microwave Integrated Circuits Conference (EuMIC), Sep 2019, Paris, France. pp.41-44, ⟨10.23919/EuMIC.2019.8909641⟩. ⟨hal-02460407⟩