Evaluation of the optoelectronic properties of ZnSnN2 thin films under different growth conditions and doping implantation of As and P at different concentrations

Leonardo Kopprio (1) , Sylvain Le Gall (1) , Christophe Longeaud (1) , Ngoc Kim Thanh Bui (2) , Boubakeur Ayachi (2) , Jean-Pierre Vilcot (2, 3) , Agathe Virfeu (4) , Jean-François Pierson (4)

1 GeePs - Laboratoire Génie électrique et électronique de Paris
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
3 OPTO - IEMN - Optoélectronique - IEMN
4 IJL - Institut Jean Lamour

Domains: Materials Science [cond-mat.mtrl-sci]

Leonardo Kopprio, Sylvain Le Gall, Christophe Longeaud, Ngoc Kim Thanh Bui, Boubakeur Ayachi, et al.. Evaluation of the optoelectronic properties of ZnSnN2 thin films under different growth conditions and doping implantation of As and P at different concentrations. JNPV 2019, Dec 2019, Dourdan, France. ⟨hal-02419004⟩