S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application

Niemat Moultif (1) , O. Latry (1) , Mamadou Ndiaye (2) , Tristan Neveu (1) , Eric Joubert (1) , C. Moreau (3) , J-F. Goupy (4)

1 GPM - Groupe de physique des matériaux
2 CEVAA - Centre d’Essai en Vibro-Acoustique pour l’Automobile
3 DGA.MI - DGA Maîtrise de l'information
4 THALES [France]

Reliability studies are fundamental to optimize the use of new emerging technologies such as AlGaN/GaN HEMTs. This paper reports a reliability study on two power amplifiers using AlGaN/GaN HEMT in real operating conditions for radar applications. Three pulsed-RF long aging tests (8000 h/11,000 h total) are performed under different conditions of (Vds), Temperature, gain compression and Duty cycle. A following of various degradation indicators during the aging tests is presented (Pout, Ids, Igs, Rds(on), Gm and Vth). This study will contribute to establish a new reliability prediction model of GaN devices and update the FIDES guide.

Mots clés: Ageing; AlGaN/GaN HEMT; Pulsed-RF Operating Life test; Reliability; Traps

Domaines: Micro et nanotechnologies/Microélectronique

Niemat Moultif, O. Latry, Mamadou Ndiaye, Tristan Neveu, Eric Joubert, et al.. S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application. Microelectronics Reliability, 2019, 100-101, pp.113434. ⟨10.1016/j.microrel.2019.113434⟩. ⟨hal-02380186⟩