Effect of Low Temperatures Irradiation on NPN Bipolar Junction Transistors

Jason Dardié (1, 2, 3) , Jérôme Boch (2, 3) , Alain Michez (2, 3) , Cathy Guasch (2, 3) , Samir Bouisri (2, 3) , Frédéric Saigné (2, 3) , Francoise Bezerra (4) , Jean-Luc Favre (1)

1 TMI-ORION
2 IES - Institut d’Electronique et des Systèmes
3 RADIAC - Radiations et composants
4 CNES - Centre National d'Études Spatiales [Toulouse]

The effect of dose on NPN bipolar junction transistors is investigated for irradiation performed at low temperatures. Degradation of forward-Gummel curves and current gain is shown and discussed in terms of physical mechanisms.

Domaines: Electronique

Jason Dardié, Jérôme Boch, Alain Michez, Cathy Guasch, Samir Bouisri, et al.. Effect of Low Temperatures Irradiation on NPN Bipolar Junction Transistors. IEEE RADECS2019, Sep 2019, Montpellier, France. ⟨hal-02307353⟩