Thermal Transient Extraction for GaN HEMTs by Frequency-Resolved Gate Resistance Thermometry with Sub-100 ns Time Resolution

Adrien Cutivet (1, 2, 3, 4) , Meriem Bouchilaoun (2, 3) , Bilal Hassan (2, 3) , Christophe Rodriguez (5, 2, 3, 1, 6) , Ali Soltani (1, 2, 3, 4) , François Boone (2, 3) , Hassan Maher (2, 3)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 LN2 - Laboratoire Nanotechnologies Nanosystèmes
3 3IT - Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke]
4 PUISSANCE - IEMN - Puissance - IEMN
5 IMRB - Institut Mondor de recherche biomédicale
6 OPTO - IEMN - Optoélectronique - IEMN

Domaines: Sciences de l'ingénieur [physics]

Adrien Cutivet, Meriem Bouchilaoun, Bilal Hassan, Christophe Rodriguez, Ali Soltani, et al.. Thermal Transient Extraction for GaN HEMTs by Frequency-Resolved Gate Resistance Thermometry with Sub-100 ns Time Resolution. physica status solidi (a), 2019, 216, pp.1800503. ⟨10.1002/pssa.201800503⟩. ⟨hal-02273385⟩