Total Ionizing Dose Effect in LDMOS oxides and devices

T. Borel , S. Furic , E. Leduc , A. Michez (1) , J. Boch (1, 2) , Antoine Touboul (1, 2) , B. Azais (3) , S. Danzeca (4) , L. Dusseau (1, 2, 5)

1 IES - Institut d’Electronique et des Systèmes
2 RADIAC - Radiations et composants
3 DGA - Direction générale de l'armement [Bagneux]
4 CERN - European Organization for Nuclear Research
5 CSU - Centre Spatial Universitaire de Montpellier-Nîmes

Domaines: Electronique

T. Borel, S. Furic, E. Leduc, A. Michez, J. Boch, et al.. Total Ionizing Dose Effect in LDMOS oxides and devices. IEEE Transactions on Nuclear Science, 2019, pp.1-1. ⟨10.1109/TNS.2019.2914091⟩. ⟨hal-02118616⟩