Recent advances in the molecular beam epitaxy of GaSbBi alloys and quantum wells

O. Delorme (1) , L. Cerutti (1, 2) , R. Kudrawiec (3) , E. Luna (4) , J. Kopaczek (3) , M. P. Polak , M. Gladysiewicz (3) , A. Trampert (4) , E. Tournié (1, 2) , Jean-Baptiste Rodriguez (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge
3 Wroclaw University of Science and Technology
4 PDI - Paul-Drude-Institut für Festkörperelektronik

Domaines: Electronique

O. Delorme, L. Cerutti, R. Kudrawiec, E. Luna, J. Kopaczek, et al.. Recent advances in the molecular beam epitaxy of GaSbBi alloys and quantum wells. 20th International Conference on Molecular-Beam Epitaxy (MBE 2018), 2018, Shanghai, China. ⟨hal-02078204⟩