Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon

M. Forster (1) , A. Cuevas (2) , E. Fourmond (1) , F E Rougieux (2) , M. Lemiti (1)

1 INL - PV - INL - Photovoltaïque
2 ANU - Australian National University - Department of engineering

This paper investigates the importance of incomplete ionization of dopants in compensated p-type Si and its impact on the majority carrier density and mobility and thus on the resistivity. Both theoretical calculations and temperature-dependent Hall-effect measurements demonstrate that the carrier density is more strongly affected by incomplete ionization in compensated Si than in uncompensated Si with the same net doping. The existence of a compensation-specific scattering mechanism to explain the reduction of mobility in compensated Si is shown not to be consistent with the T-dependence of the measured carrier mobility. The experiment also shows that, in the vicinity of 300 K, the resistivity of compensated Si has a much weaker dependence on temperature than that of uncompensated silicon. 2

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Micro et nanotechnologies/Microélectronique

M. Forster, A. Cuevas, E. Fourmond, F E Rougieux, M. Lemiti. Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon. Journal of Applied Physics, 2012, 111 (4), pp.043701. ⟨10.1063/1.3686151⟩. ⟨hal-02047842⟩