Temperature evolution of defects and atomic ordering in Si 1− x Ge x islands on Si(001)

M.-I. Richard (1) , A. Malachias (2) , M. Stoffel (3) , T. Merdzhanova , O. Schmidt , Gilles Renaud (4) , T. Metzger , T. Schulli (5)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 UFMG - Universidade Federal de Minas Gerais = Federal University of Minas Gerais [Belo Horizonte, Brazil]
3 Laboratory of Dendrogeomorphology
4 NRS - Nanostructures et Rayonnement Synchrotron
5 ESRF - European Synchrotron Radiation Facility

Domaines: Chimie-Physique [physics.chem-ph]

M.-I. Richard, A. Malachias, M. Stoffel, T. Merdzhanova, O. Schmidt, et al.. Temperature evolution of defects and atomic ordering in Si 1− x Ge x islands on Si(001). Journal of Applied Physics, 2016, 119 (8), pp.085704. ⟨hal-02013989⟩