Sub-band modulated electronic transport in planar fully-depleted silicon-on-insulator MOSFETs

G. Umana-Membreno (1) , S.-J. Chang (2) , M. Bawedin (3, 4) , J. Antoszewski (1) , S. Cristoloveanu (5) , L. Faraone (1)

1 EECE - School of Electrical, Electronic and Computer Engineering [Crawley]
2 Department of Electrical Engineering [Yale University]
3 IES - Institut d’Electronique et des Systèmes
4 M@CSEE - Micro électronique, Composants, Systèmes, Efficacité Energétique
5 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation

Multicarrier transport planar fully-depleted silicon-on-insulator MOSFETs has been investigated employing magnetic-field dependent geometrical magnetoresistance measurements and high-resolution mobility spectrum analysis. The results indicate that electronic transport in the 10 nm thick Si channel layer is due to two distinct and well-defined electron species. According to self-consistent Poisson-Schrödinger calculations, the two distinct electron species detected correspond to carriers in distinct energy sub-bands arising from strong carrier confinement and volume inversion. The mobility peak of the dominant carrier was found to occur under gate bias conditions that result in a minimum perpendicular effective electric field.

Mots clés: FD-SOI; mobility; magnetoresistance; Hall-effect; mobility spectrum analysis; MOSFET; volume inversion

Domaines: Micro et nanotechnologies/Microélectronique

G. Umana-Membreno, S.-J. Chang, M. Bawedin, J. Antoszewski, S. Cristoloveanu, et al.. Sub-band modulated electronic transport in planar fully-depleted silicon-on-insulator MOSFETs. 2014 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD), Dec 2014, Perth, Australia. pp.294-297, ⟨10.1109/COMMAD.2014.7038715⟩. ⟨hal-02004000⟩