Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

T.A. Karatsori (1) , M. Pastorek (2, 3) , C.G. Theodorou (1) , A. Fadjie (2) , Nicolas Wichmann (2, 3) , L. Desplanque (2, 4) , X. Wallart (2, 4) , S. Bollaert (2, 3) , A. Dimitriadis (5) , G. Ghibaudo (1)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
3 ANODE - IEMN - Advanced NanOmeter DEvices - IEMN
4 EPIPHY - IEMN - EPItaxie et PHYsique des hétérostructures - IEMN
5 Aristotle University of Thessaloniki, Department of Physics

A complete static and low frequency noise characterization of ultra-thin body InAs MOSFETs is presented. Characterization techniques, such as the well-known Y-function method established for Si MOSFETs, are applied in order to extract the electrical parameters and study the behavior of these research grade devices. Additionally, the Lambert-W function parameter extraction methodology valid from weak to strong inversion is also used in order to verify its applicability in these experimental level devices. Moreover, a low-frequency noise characterization of the UTB InAs MOSFETs is presented, revealing carrier trapping/detrapping in slow oxide traps and remote Coulomb scattering as origin of 1/f noise, which allowed for the extraction of the oxide trap areal density. Finally, Lorentzian-like noise is also observed in the sub-micron area devices and attributed to both Random Telegraph Noise from oxide individual traps and g-r noise from the semiconductor interface.

Mots clés: InAs; Low-frequency noise; Random telegraph noise; MOSFETs; III-V materials; Electrical characterization

Domaines: Micro et nanotechnologies/Microélectronique

T.A. Karatsori, M. Pastorek, C.G. Theodorou, A. Fadjie, Nicolas Wichmann, et al.. Static and low frequency noise characterization of ultra-thin body InAs MOSFETs. Solid-State Electronics, 2018, 143, pp.56-61. ⟨10.1016/j.sse.2017.12.001⟩. ⟨hal-01948029⟩