Three dimensional imaging and analysis of a single nano-device at the ultimate scale using correlative microscopy techniques

A. Grenier (1) , Sébastien Duguay (2) , J. P. Barnes (1) , R. Serra (1) , Nicolas Rolland (2) , G. Audoit (1) , P. Morin (3) , P. Gouraud (3) , D. Cooper (1) , D. Blavette (2) , François Vurpillot (2)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 GPM - Groupe de physique des matériaux
3 ST-CROLLES - STMicroelectronics [Crolles]

The analysis of a same sample using nanometre or atomic-scale techniques is fundamental to fully understand device properties. This is especially true for the dopant distribution within last generation nano-transistors such as MOSFET or FINFETs. In this work, the spatial distribution of boron in a nano-transistor at the atomic scale has been investigated using a correlative approach combining electron and atom probe tomography. The distortions present in the reconstructed volume using atom probe tomography have been discussed by simulations of surface atoms using a cylindrical symmetry taking into account the evaporation fields. Electron tomography combined with correction of atomic density was used so that to correct image distortions observed in atom probe tomography\backslashnreconstructions. These corrected atom probe tomography\backslashnreconstructions then enable a detailed boron\backslashndoping analysis of the device.

Domaines: Physique [physics]

A. Grenier, Sébastien Duguay, J. P. Barnes, R. Serra, Nicolas Rolland, et al.. Three dimensional imaging and analysis of a single nano-device at the ultimate scale using correlative microscopy techniques. Applied Physics Letters, 2015, 106 (21), pp.213102. ⟨10.1063/1.4921352⟩. ⟨hal-01928856⟩