Quantitative investigation of SiGeC layers using atom probe tomography

Robert Estivill (1, 2, 3, 4) , Adeline Grenier (3) , Sébastien Duguay (4) , François Vurpillot (4) , Tanguy Terlier (3) , Jean Paul Barnes (3) , Jean Michel Hartmann (3) , Didier Blavette (4)

1 LCC - Laboratoire de chimie de coordination
2 ST-CROLLES - STMicroelectronics [Crolles]
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
4 GPM - Groupe de physique des matériaux

The quantification of carbon and germanium in a Si/SiGeC multilayer structure using atom probe tomography has been investigated as a function of analysis conditions. The best conditions for quantitative results are obtained using an intermediate electric field and laser power. Carbon evaporation shows strong spatial and temporal correlation. By using multi-ion event analysis, an evaporation mechanism is put forward to explain the modification of mass spectra as a function of electric field and laser power.

Mots clés: Multi-events; SiGe quantification; Carbon doped SiGe; Molecular ions; Atom probe

Domaines: Physique [physics]

Robert Estivill, Adeline Grenier, Sébastien Duguay, François Vurpillot, Tanguy Terlier, et al.. Quantitative investigation of SiGeC layers using atom probe tomography. Ultramicroscopy, 2015, 150, pp.23--29. ⟨10.1016/j.ultramic.2014.11.020⟩. ⟨hal-01928855⟩