Quantitative investigation of SiGeC layers using atom probe tomography

Abstract : The quantification of carbon and germanium in a Si/SiGeC multilayer structure using atom probe tomography has been investigated as a function of analysis conditions. The best conditions for quantitative results are obtained using an intermediate electric field and laser power. Carbon evaporation shows strong spatial and temporal correlation. By using multi-ion event analysis, an evaporation mechanism is put forward to explain the modification of mass spectra as a function of electric field and laser power.
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https://hal.archives-ouvertes.fr/hal-01928855
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Submitted on : Tuesday, November 20, 2018 - 6:15:52 PM
Last modification on : Tuesday, July 16, 2019 - 11:24:36 AM

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Robert Estivill, Adeline Grenier, Sébastien Duguay, François Vurpillot, Tanguy Terlier, et al.. Quantitative investigation of SiGeC layers using atom probe tomography. Ultramicroscopy, 2015, 150, pp.23--29. ⟨10.1016/j.ultramic.2014.11.020⟩. ⟨hal-01928855⟩

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