Low Frequency Noise in advanced 55nm BiCMOS SiGeC Heterojunction Bipolar Transistors : impact of collector doping

B. Sagnes (1, 2) , F. Pascal (1, 2) , M. Seif (1) , A. Hoffmann (1, 2) , S. Haendler (3) , P. Chevalier (3) , D. Gloria (3)

1 IES - Institut d’Electronique et des Systèmes
2 M@CSEE - Micro électronique, Composants, Systèmes, Efficacité Energétique
3 ST-CROLLES - STMicroelectronics [Crolles]

Domaines: Electronique

B. Sagnes, F. Pascal, M. Seif, A. Hoffmann, S. Haendler, et al.. Low Frequency Noise in advanced 55nm BiCMOS SiGeC Heterojunction Bipolar Transistors : impact of collector doping. 2017 International Conference on Noise and Fluctuations (ICNF), 2017, Vilnius, Lithuania. ⟨hal-01907725⟩