Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures

A. Ajay (1) , C Lim (1) , D Browne (1) , J. Polaczyński , E. Bellet-Amalric (1) , J. Bleuse (1) , M. den Hertog (2) , E. Monroy (1)

1 NPSC - Nanophysique et Semiconducteurs
2 NEEL - MRS - Matériaux, Rayonnements, Structure

Domaines: Matière Condensée [cond-mat]

A. Ajay, C Lim, D Browne, J. Polaczyński, E. Bellet-Amalric, et al.. Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures. Nanotechnology, 2017, 28 (40), pp.405204. ⟨10.1088/1361-6528/aa8504⟩. ⟨hal-01890886⟩