Characterization of trench gate IGBT gate oxides submitted to thermo-electric cycling by capacitance-voltage and thermal step measurements

S. Baudon , L. Boyer (1, 2) , P. Notingher (1, 2) , S. Agnel (1, 2) , V. Smet , J.-J. Huselstein (1, 2) , F. Forest (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 GEM - Groupe énergie et matériaux

Domaines: Electronique

S. Baudon, L. Boyer, P. Notingher, S. Agnel, V. Smet, et al.. Characterization of trench gate IGBT gate oxides submitted to thermo-electric cycling by capacitance-voltage and thermal step measurements. 8th Conference on the French Society of Electrostatics SFE, 2012, Cherbourg, France. ⟨hal-01882797⟩