Synergy of non-ionizing and ionizing processes in the reliability degradation of Power MOSFETs oxide

M. Naceur (1) , Antoine Touboul (1, 2) , M. Gedion (1) , J.-R. Vaillé (1, 2) , Frédéric Wrobel (1, 2) , E. Lorfèvre (3) , Frédéric Saigné (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 RADIAC - Radiations et composants
3 CNES - Centre National d'Études Spatiales [Toulouse]

Domaines: Electronique

M. Naceur, Antoine Touboul, M. Gedion, J.-R. Vaillé, Frédéric Wrobel, et al.. Synergy of non-ionizing and ionizing processes in the reliability degradation of Power MOSFETs oxide. IEEE RADECS, 2011, Seville, Spain. ⟨hal-01824307⟩