High ionizing dose effects on ultra thin SiO2/Si structures revealed by Conductive Atomic Force Microscopy

R. Arinero (1, 2) , Antoine Touboul (1, 3) , M. Ramonda (1) , C. Guasch (1, 3) , Y. Gonzalez-Velo (1) , J. Boch (1, 3) , Frédéric Saigné (1, 3)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge
3 RADIAC - Radiations et composants

Domaines: Sciences de l'ingénieur [physics]

R. Arinero, Antoine Touboul, M. Ramonda, C. Guasch, Y. Gonzalez-Velo, et al.. High ionizing dose effects on ultra thin SiO2/Si structures revealed by Conductive Atomic Force Microscopy. 2011 12th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Sep 2011, Sevilla, France. ⟨10.1109/RADECS.2011.6131383⟩. ⟨hal-01791166⟩