GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by molecular beam epitaxy

Laurent Cerutti (1, 2) , A. Ducanchez (1) , G. Narcy (1) , P. Grech (1) , G. Boissier (1) , Arnaud Garnache (1, 3) , Eric Tournié (1, 2) , Frédéric Genty (1)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge
3 TéHO - Térahertz, hyperfréquence et optique

Domaines: Electronique; Physique [physics]

Laurent Cerutti, A. Ducanchez, G. Narcy, P. Grech, G. Boissier, et al.. GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by molecular beam epitaxy. International Molecular Beam Epitaxy Conference (MBE international), 2008, Vancouver, Canada. ⟨hal-01785734⟩