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Investigation of Trapping Behaviour in GaN HEMTs through physical TCAD Simulation of Capacitance Voltage characteristics

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https://hal.archives-ouvertes.fr/hal-01718857
Contributor : Arnaud Curutchet <>
Submitted on : Tuesday, February 27, 2018 - 5:18:32 PM
Last modification on : Thursday, November 15, 2018 - 11:56:00 AM

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Mukherjee Kalparupa, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat. Investigation of Trapping Behaviour in GaN HEMTs through physical TCAD Simulation of Capacitance Voltage characteristics. EuroSimE 2018, Apr 2018, Toulouse, France. ⟨10.1109/EuroSimE.2018.8369924⟩. ⟨hal-01718857⟩

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