Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode

A. Divay (1) , Cédric Duperrier (2) , Farid Temcamani (3) , O. Latry (1)

1 GPM - Groupe de physique des matériaux
2 ASTRE [Cergy-Pontoise]
3 QUARTZ - Laboratoire QUARTZ

Domaines: Electronique

A. Divay, Cédric Duperrier, Farid Temcamani, O. Latry. Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode. Microelectronics Reliability, 2016, 64, pp.585 - 588. ⟨10.1016/j.microrel.2016.07.123⟩. ⟨hal-01690679⟩