Low Frequency Drain Noise Characterization and TCAD Physical Simulations of GaN HEMTs: Identification and analysis of physical location of traps

Nandha Kumar Subramani (1) , Julien Couvidat (1) , Ahmad Al Hajjar (2) , Jean-Christophe Nallatamby (1) , Raymond Quéré (1)

1 XLIM-SRF - Systèmes RF
2 OMMIC

Domaines: Electronique

Nandha Kumar Subramani, Julien Couvidat, Ahmad Al Hajjar, Jean-Christophe Nallatamby, Raymond Quéré. Low Frequency Drain Noise Characterization and TCAD Physical Simulations of GaN HEMTs: Identification and analysis of physical location of traps. IEEE Electron Device Letters, 2017, pp.1 - 1. ⟨10.1109/LED.2017.2771407⟩. ⟨hal-01661726⟩