Post-Irradiation-Gate-Stress on Power MOSFETs: Quantification of Latent Defects-Induced Reliability Degradation

A. Privat (1) , Antoine Touboul (2, 3) , A. Michez (2) , S. Bourdarie (4) , J.-R. Vaillé (2, 3) , Frédéric Wrobel (2, 3) , R. Arinero (2, 3) , N. Chatry (5) , G. Chaumont (6) , E. Lorfèvre (7) , F. Saigné (2, 3)

1 Service Geologique de la Nouvelle-Calédonie
2 IES - Institut d’Electronique et des Systèmes
3 RADIAC - Radiations et composants
4 ONERA - The French Aerospace Lab [Toulouse]
5 TRAD [Labège]
6 STMicroelectronics
7 CNES - Centre National d'Études Spatiales [Toulouse]

Domaines: Electronique

A. Privat, Antoine Touboul, A. Michez, S. Bourdarie, J.-R. Vaillé, et al.. Post-Irradiation-Gate-Stress on Power MOSFETs: Quantification of Latent Defects-Induced Reliability Degradation. IEEE Transactions on Nuclear Science, 2013, 60 (6), pp.4166 - 4174. ⟨10.1109/TNS.2013.2287974⟩. ⟨hal-01634014⟩