Energy band diagram and energy band offsets of Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface determined by capacitance-voltage measurements

A. Cheriet , M. Mebarki , Philippe Christol (1, 2) , H. Aït-Kaci (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge

In this work, we report on the determination of band discontinuities and energy band diagram of the Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface at equilibrium and room temperature, by capacitance-voltage measurements (C-V). Mesa diodes, with three different diameters are characterized and physical quantities like doping concentration in the unintentionally doped (n.i.d) InAsSb material and diffusion potentials at interfaces are extracted from C-V data. Finally, the energy band diagram of the structure is drawn and experimental values of energy band offsets are deduced and compared to those obtained by a numerical simulation.

Mots clés: Capacitance-voltage measurements; InAsSb; GaAlAsSb; Diffusion potential; Band offsets

Domaines: Electronique

A. Cheriet, M. Mebarki, Philippe Christol, H. Aït-Kaci. Energy band diagram and energy band offsets of Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface determined by capacitance-voltage measurements. Materials Science in Semiconductor Processing, 2017, 66, pp.50-55. ⟨10.1016/j.mssp.2017.02.034⟩. ⟨hal-01626981⟩