X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates

J.B. Rodriguez (1, 2) , K. Madiomanana (1) , L. Cerutti (1, 2) , A. Castellano (1) , E. Tournié (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge

Domaines: Electronique

J.B. Rodriguez, K. Madiomanana, L. Cerutti, A. Castellano, E. Tournié. X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates. Journal of Crystal Growth, 2016, 439, pp.33 - 39. ⟨10.1016/j.jcrysgro.2016.01.005⟩. ⟨hal-01626675⟩