Fabrication and Characterization of GaSb-Based Monolithic Resonant-Cavity Light-Emitting Diodes Emitting Around 2.3 μm and Including a Tunnel Junction - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Journal of Selected Topics in Quantum Electronics Année : 2008

Fabrication and Characterization of GaSb-Based Monolithic Resonant-Cavity Light-Emitting Diodes Emitting Around 2.3 μm and Including a Tunnel Junction

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Electronique

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https://hal.science/hal-01616283

Soumis le : vendredi 13 octobre 2017-14:38:29

Dernière modification le : mardi 12 septembre 2023-14:06:26

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hal-01616283 , version 1 (13-10-2017)

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Arnaud Ducanchez, Laurent Cerutti, Alban Gassenq, Pierre Grech, Frédéric Genty. Fabrication and Characterization of GaSb-Based Monolithic Resonant-Cavity Light-Emitting Diodes Emitting Around 2.3 μm and Including a Tunnel Junction. IEEE Journal of Selected Topics in Quantum Electronics, 2008, 14 (4), pp.1014 - 1021. ⟨10.1109/JSTQE.2008.922014⟩. ⟨hal-01616283⟩

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