Mesoporous germanium by high frequency bipolar electrochemical etching for optical sensor applications

Youcef A Bioud (1, 2, 3) , Abderraouf A Boucherif (2, 3, 1) , Ali A Belarouci (4) , Etienne A Paradis (2, 1, 3) , Dominique A Drouin (2, 1, 3) , Richard A Arès (2, 1, 3)

1 3IT - Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke]
2 UdeS - Université de Sherbrooke
3 LN2 - Laboratoire Nanotechnologies Nanosystèmes
4 INL - Photonique - INL - Nanophotonique

Mesoporous germanium layers (MP-Ge) were prepared with high growth rate (up to 300 nm/min) by using a new high-current-density, high-frequency bipolar electrochemical etching (BEE) process. The potential of porous semiconductor layers for optical sensing has been assessed by examining the resonance wavelength shift in the reflectance spectra before and after infiltration of ethanol.

Domaines: Matériaux

Youcef A Bioud, Abderraouf A Boucherif, Ali A Belarouci, Etienne A Paradis, Dominique A Drouin, et al.. Mesoporous germanium by high frequency bipolar electrochemical etching for optical sensor applications. Porous Semiconductors - Science and Technology (PSST) Conference, Mar 2016, Tarragona, Spain. ⟨hal-01565497⟩