Simulation of Single Particle Displacement Damage in Silicon – Part I: Global Approach and Primary Interaction Simulation

Melanie Raine (1) , Nicolas Richard (1) , Antoine Jay (2) , Vincent Goiffon (2) , Sylvain Girard (3) , Philippe Paillet (1)

1 DAM/DIF - DAM Île-de-France
2 DEOS - Département Electronique, Optronique et Signal
3 LHC - Laboratoire Hubert Curien

A comprehensive approach is developed for the simulation of single particle displacement damage in silicon. The first step corresponding to Monte Carlo simulation of the primary interaction is presented.

Domains: Physics [physics]

Melanie Raine, Nicolas Richard, Antoine Jay, Vincent Goiffon, Sylvain Girard, et al.. Simulation of Single Particle Displacement Damage in Silicon – Part I: Global Approach and Primary Interaction Simulation. 2016 IEEE Nuclear and Space Radiation Effects Conference (NSREC 2016), Jul 2016, Portland, United States. ⟨hal-01528225⟩