Preparation of p-type materials thin-film by using buffer layer

Delphine Flahaut (1) , T. Mihara (2) , R. Funahashi

1 IPREM - Institut des sciences analytiques et de physico-chimie pour l'environnement et les materiaux
2 Future Creation Lab.

c-axis oriented Ca2.7Bi0.3Co4O9 thin films have been grown on glass substrate. Deposition with a buffer-layer has also been attempted. Two orientations of the CeO2 buffer layer can be obtained, (111) and (100) depending on deposition conditions. 349 phase is well grown on the buffer layer but no peaks are detected on X-Ray patterns. T Seebeck coefficient of the 349 phase reaches -60μV.K-1 but the resistivity remains high. © 2006 IEEE.

Domaines: Chimie; Matériaux

Delphine Flahaut, T. Mihara, R. Funahashi. Preparation of p-type materials thin-film by using buffer layer. International Conference on Thermoelectrics, ICT, Proceedings, 2006, Unknown, Unknown Region. pp.465--467, ⟨10.1109/ICT.2006.331315⟩. ⟨hal-01499378⟩