High Cut-off Frequency RF Switches integrating a Metal-Insulator Transition Material

Amine Mennai (1) , Annie Bessaudou (1) , Françoise Cosset (1) , Cyril Guines (1) , Damien Passerieux (1) , Pierre Blondy (1) , Aurelian Crunteanu (1)

1 XLIM-MINACOM - MINACOM

We present the design and the RF performances of two- terminals in-plane RF switches based on dioxide vanadium (VO2)-phase transition material. The VO2 material undergoes a thermally-driven metal- insulator transition showing a resistivity variation up to five orders of magnitude as the material changes between its insulator and metallic states. We realized inline RF switches integrating VO2 patterns of different lengths (3 to 20 m) and investigated their switching properties for both thermal and electrical actuation. For a thermally actuated 3-m length VO2 pattern switch we measured an off-state capacitance of 7.7 Ff and an on-state resistance of ~2 , with a cut-off frequency higher than 10 THz.

Mots clés: RF switches; metal insulator transition; VO2; negative differential resistance; self oscillations

Domaines: Electromagnétisme; Matériaux; Micro et nanotechnologies/Microélectronique

Amine Mennai, Annie Bessaudou, Françoise Cosset, Cyril Guines, Damien Passerieux, et al.. High Cut-off Frequency RF Switches integrating a Metal-Insulator Transition Material. IEEE MTT-S International Microwave Symposium - IMS 2015, Phoenix, AZ, USA, May 17-22 May, 2015, IEEE, May 2015, Phoenix, United States. ⟨hal-01226178⟩